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PID絕(jue)緣(yuan)測(ce)(ce)試(shi)儀（TOS7210S）是為準確有效地(di)對(dui)太陽(yang)能電池模塊的PID(Potential Induced Degradation)現(xian)象進行評估(gu)，以絕(jue)緣(yuan)電阻測(ce)(ce)試(shi)儀（TOS7200）為基(ji)礎設計而(er)成的測(ce)(ce)試(shi)儀。 
附有極性(xing)切換功能，輸出電(dian)壓可達2000V,同時裝載了(le)n*分辨率的電(dian)流(liu)表(biao)，因此不僅(jin)可以(yi)(yi)進(jin)(jin)行PID評(ping)估，還(huan)可以(yi)(yi)用(yong)于要(yao)求進(jin)(jin)行高敏感度測試的絕緣體評(ping)估測試。標準(zhun)安裝了(le)可從外部調用(yong)的面板存儲器及RS232C接(jie)口，因此也可以(yi)(yi)靈活對(dui)應自動化(hua)系統。
什么是PID現象？
PID現象(xiang)是指太(tai)陽能(neng)(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)與(yu)邊(bian)框長期被施以(yi)(yi)(yi)高(gao)(gao)電(dian)(dian)(dian)(dian)壓，電(dian)(dian)(dian)(dian)池(chi)(chi)發(fa)電(dian)(dian)(dian)(dian)量顯著降低的(de)現象(xiang)。目(mu)前(qian)(qian)(qian)認(ren)為(wei)所施加(jia)(jia)(jia)的(de)電(dian)(dian)(dian)(dian)壓越高(gao)(gao)，越是在高(gao)(gao)溫(wen)、高(gao)(gao)濕的(de)環境下(xia)劣(lie)化現象(xiang)越嚴(yan)重(zhong)。如晶(jing)體(ti)硅(gui)太(tai)陽能(neng)(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)模塊(kuai)的(de)輸出電(dian)(dian)(dian)(dian)壓即使只有數十V，一旦直接(jie)(jie)連接(jie)(jie)的(de)片(pian)數增加(jia)(jia)(jia)，串內(nei)(nei)的(de)電(dian)(dian)(dian)(dian)位差將(jiang)(jiang)變得(de)非常高(gao)(gao)。一方面(mian)，PCS（Power Conditioning System）作為(wei)交流電(dian)(dian)(dian)(dian)源與(yu)系(xi)(xi)統相(xiang)連,使接(jie)(jie)地形態發(fa)生(sheng)變化。輸入(ru)端(duan)采(cai)用(yong)浮接(jie)(jie)（一側電(dian)(dian)(dian)(dian)極不(bu)能(neng)(neng)接(jie)(jie)地線(xian)）的(de)無變壓器方式近年有所增加(jia)(jia)(jia)。這種情況下(xia)電(dian)(dian)(dian)(dian)池(chi)(chi)和地線(xian)間將(jiang)(jiang)發(fa)生(sheng)高(gao)(gao)電(dian)(dian)(dian)(dian)位差。現在可明確(que)的(de)是，晶(jing)體(ti)硅(gui)太(tai)陽能(neng)(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)模塊(kuai)中，相(xiang)對于邊(bian)框（接(jie)(jie)地線(xian)）負極電(dian)(dian)(dian)(dian)位高(gao)(gao)的(de)電(dian)(dian)(dian)(dian)池(chi)(chi)容(rong)易發(fa)生(sheng)PID現象(xiang)。（請參照圖(tu)1）目(mu)前(qian)(qian)(qian)，日本國內(nei)(nei)以(yi)(yi)(yi)zui大(da)600V、歐洲以(yi)(yi)(yi)zui大(da)1000V的(de)系(xi)(xi)統電(dian)(dian)(dian)(dian)壓運行(xing)太(tai)陽能(neng)(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)模塊(kuai)，但是目(mu)前(qian)(qian)(qian)出現了提(ti)高(gao)(gao)zui大(da)系(xi)(xi)統電(dian)(dian)(dian)(dian)壓以(yi)(yi)(yi)削減(jian)企(qi)業用(yong)大(da)規模太(tai)陽能(neng)(neng)發(fa)電(dian)(dian)(dian)(dian)系(xi)(xi)統的(de)串數、PCS總數，提(ti)高(gao)(gao)發(fa)電(dian)(dian)(dian)(dian)效率的(de)趨勢(shi)。 
圖(tu)2模(mo)擬了晶體(ti)硅(gui)太陽能(neng)電(dian)(dian)池(chi)模(mo)塊的(de)(de)(de)處于(yu)高電(dian)(dian)位差(cha)的(de)(de)(de)狀(zhuang)況。邊框為正極(ji)電(dian)(dian)位、模(mo)塊電(dian)(dian)路(lu)處于(yu)負*電(dian)(dian)位的(de)(de)(de)狀(zhuang)況。目(mu)前認(ren)為是(shi)由于(yu)超白鋼化玻璃內的(de)(de)(de)鈉離子向電(dian)(dian)池(chi)側遷移(yi)而引起(qi)劣化。（薄膜太陽能(neng)電(dian)(dian)池(chi)模(mo)塊也被確認(ren)出現PID現象，但是(shi)發生(sheng)劣化的(de)(de)(de)機制與晶體(ti)硅(gui)太陽能(neng)電(dian)(dian)池(chi)模(mo)塊不(bu)同(tong)。）現在，各種(zhong)研究機構正在通過(guo)研究、試驗查找(zhao)PID現象的(de)(de)(de)原因。
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